Silica Wafer 6'' (152.4 mm) with Thermal Oxide Layer 200 nm (Qty: 1)

• Grade: Prime / CZ Virgin, Orientation: 100
• Thickness of Silicon Substrate: 650 um +/- 10 um, Thickness of Dry Oxide Layer: 200 nm +/- 10 nm
• Type/Dopant: P/Boron
• Front Surface: Polished, Back Surface: Etched
• TIR < 3 μm, TTV < 10 μm, BOW < 10 μm, Roughness < 0.5 nm

Description Ultra-Flat Silicon Wafers Prime/CZ Virgin Grade; Orientation: <100>; Resistivity: 1-30 Ω; Type: P/Dopant: Boron; TIR <3 μm, TTV <10 μm, BOW <10 μm, Roughness <0.5 nm; Sizes Available: Six Inch 6'' Wafer with a Thickness of 650 µm +/- 20 µm; Four Inch 4'' Wafer with a Thickness of 525 µm +/- 20 µm; Three Inch 3'' Wafer with a Thickness of 400 µm +/- 20 µm; Two Inch 2'' Wafer with a Thickness of 300 µm +/- 15 µm; Formats Available: 1 Piece in a Wafer Carrier; 10 Pieces in a Wafer Box; 25 Pieces in a Wafer Box; Wafer carriers or wafer boxes are included for every single purchase. We offer the ultra-flat silicon and silica wafers of the prime grade. These silicon and silica wafers are perfect for chemical deposition or cell growth while the 5mm x 5mm diced chips are ideal for direct AFM and SEM imaging. The silica substrates are silicon substrates uniformly coated with a 200 nm thermally grown SiO2 surface layer (dry oxidation process only). Compared with the transitional chemical vapor deposition (CVD) method, the thermal oxidation provides a higher uniformity and a higher dielectric strength. Please visit https://www.amazon.com/dp/B07C1KPC92 for our listings for silica wafers. For more information, please visit us at www.alphananotechne.com or send us your questions to info@alphananotechne.com or ask questions directly on the "Have a question?" tab above. No duties or additional taxes for the orders delivered to the UK addresses. Orders destined for the European countries will be shipped from the UK office. For further questions, please email us at info@alphananotechne.com and we will get back to you within a couple of hours.